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Low VCE(sat) IGBT
IXSH 45N100 IXSM 45N100
VCES IC25 VCE(sat)
= 1000 V = 75 A = 2.7 V
Short Circuit SOA Capability
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 2.7 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 * VCES, TJ = 125C RG = 22 W, non repetitive TC = 25C
Maximum Ratings 1000 1000 20 30 75 45 180 ICM = 90 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A ms
TO-247 AD (IXSH)
G
C
E
TO-204 AE (IXSM)
C
W C C C
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 5 TJ = 25C TJ = 125C 8 250 1 100 2.7 V V mA mA nA V
Features * International standard packages * Guaranteed Short Circuit SOA capability * Low VCE(sat) - for low on-state conduction losses * High current handling capability * MOS Gate turn-on - drive simplicity
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 3 mA, VGE = 0 V = 4 mA, VCE = VGE
Applications * AC motor speed control * Uninterruptible power supplies (UPS) * Welding
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Advantages * Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) * High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
93013E (12/96)
(c) 2000 IXYS All rights reserved
1-4
IXSH 45N100
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 25 195 4150 VCE = 25 V, VGE = 0 V, f = 1 MHz 300 60 165 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 40 80 80 150 400 1000 15 100 300 5.4 550 2200 25 900 2900 1500 260 60 200 S A pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.42 K/W 0.25 K/W
IXSM 45N100
TO-247 AD (IXSH) Outline
gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle d 2 % VGE = 15 V, VCE = 10 V
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8
Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
1.5 2.49
TO-204 AE (IXSM) Outline
Dim. A B C D E F G H J K Q R
Millimeter Min. Max. 38.61 39.12 - 22.22 6.40 11.40 1.45 1.60 1.52 3.43 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 26.66
Inches Min. Max. 1.520 1.540 - 0.875 0.252 0.449 0.057 0.063 0.060 0.135 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.050
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXSH 45N100
Fig.1 Saturation Characteristics
70 60
TJ = 25C VGE = 15V 13V 11V
IXSM 45N100
Fig.2 Output Characterstics
300
TJ = 25C
250
VGE = 15V
IC - Amperes
40 30 20 10
7V
IC - Amperes
50
200 150 100
11V 13V
9V
50
9V
0
0 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
TJ = 25C
Fig.4 Temperature Dependence of Output Saturation Voltage
1.8
VGE = 15V IC = 90A
1.6
VCE(sat) - Normalized
VCE - Volts
1.4 1.2 1.0 0.8 0.6 -50
IC = 45A
6 5 4 3 2 1 0 8 9 10 11 12 13 14 15
IC = 22.5A IC = 90A IC = 45A
IC = 22.5A
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig.5 Input Admittance
90 80 70
Fig.6 Temperature Dependence of Breakdown and Threshold Voltage
1.3
VCE = 10V
BV / V(th) - Normalized
1.2 1.1 1.0 0.9 0.8 0.7 -50
VGE(th) IC = 4mA
IC - Amperes
60 50 40 30 20 10 0
TJ = 25C TJ = 125C TJ = - 40C
BVCES IC = 3mA
4
5
6
7
8
9
10 11 12 13 14 15
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXSH 45N100
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current
3000 2750
TJ = 125C RG = 10W Eoff
IXSM 45N100
Fig.8
60 50 2600
Dependence of Turn-Off Energy Per Pulse and Fall Time on RG
40
TJ = 125C IC = 45A
tfi - nanoseconds
tfi - nanoseconds
2400
tfi
35
tfi
2250 2000 1750 1500
30 20 10 0 100
Eoff - millijoules
2500
40
2200
Eoff
30
2000
25
1800
0
20
40
60
80
0
10
20
30
40
20 50
IC - Amperes
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15 12 100
Fig.10 Turn-Off Safe Operating Area
IC = 45A VCE = 500V
10
TJ = 125C RG = 2.7W dV/dt < 6V/ns
9 6 3 0 0 50 100 150 200
Ic - Amperes
VGE - Volts
1
0.1
0.01 0 200 400 600 800 1000
Qg - nanocoulombs
VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
ZthJC (K/W)
0.1 D=0.2
D=0.1
D=0.05
D=0.02
0.01 D=0.01
Single Pulse
D = Duty Cycle
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - seconds
(c) 2000 IXYS All rights reserved
Eoff - millijoules
4-4

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